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KE250 MNADJR 2SC756A BR501 NK9410 H47UG DZ2W180 ACM2004C
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  1 p-channel 30-v (d-s) mosfet fe atures ? halogen-fr ee according to iec 61249-2-21 definition ?trenchfet ? power mosfet ? 100 % r g tested ? compliant to rohs directive 2002/95/ec appli cations ? load switch ? notebook adaptor switch ? dc/dc converter no tes: a. based on t c = 25 c. b. surface mounted on 1" x 1" fr4 board. c. t = 5 s. d. maximum under steady state conditions is 166 c/w. e. package limited. product summary v ds (v) r ds(on) ( ) i d (a) a, e q g ( typ.) - 30 0.053 at v gs = - 10 v - 5. 6 7 nc 0.070 at v gs = - 4.5 v - 4. 6 g t o-236 (sot-23) s d to p v ie w 2 3 1 dts3401a s g d p- c hannel m os fet ab solute maximum ratings t a = 25 c, unless otherwise noted p arameter symbol limit unit drain-source voltage v ds - 30 v gate-sou rce voltage v gs 20 con tinuous drain current (t j = 150 c) t c = 25 c i d - 5. 6 a t c = 70 c - 4.7 t a = 25 c - 4. 2 b, c t a = 70 c - 3. 3 b, c pulsed drain current i dm - 25 con tinous source-drain diode current t c = 25 c i s - 2. 1 t a = 25 c - 1 b, c maxim um power dissipation t c = 25 c p d 2.5 w t c = 70 c 1.6 t a = 25 c 1.25 b, c t a = 70 c 0.8 b, c oper ating junction and storage temperature range t j , t st g - 55 to 150 c thermal res istance ratings p arameter symbol typical maximum unit maximum junction-to-ambient b, d t 5 s r thj a 75 100 c/ w maximum junction-to-foot (drain) steady state r thjf 40 50 dt 6$ www.din-tek.jp
2 no tes: a. pulse test; pulse width 300 s, duty cycle 2 %. b. guaranteed by design, not s ubject to production testing. st resses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. s pecifications t j = 25 c, unless otherwise noted p arameter symbol test conditions min. typ. max. unit static drain-source breakdo wn voltage v ds v gs = 0 v , i d = - 2 50 a - 30 v v ds t emperature coefficient v ds /t j i d = - 250 a - 19 mv/c v gs( th) t emperature coefficient v gs( th) /t j 4.4 gate-s ource threshold voltage v gs (th) v ds = v gs , i d = - 250 a - 1 .2 - 2.5 v gate-source leakage i gss v ds = 0 v , v gs = 20 v 100 na zero gate voltage drain current i dss v ds = - 30 v, v gs = 0 v - 1 a v ds = - 30 v , v gs = 0 v , t j = 55 c - 5 on-state drain current a i d( on) v ds - 5 v , v gs = - 10 v - 25 a drain-source on-state resistance a r ds( on) v gs = - 10 v , i d = - 4. 2 a 0.037 0.053 v gs = - 4. 5 v, i d = - 3.2 a 0.062 0.070 forward transconductance a g fs v ds = - 15 v , i d = - 4.2 a 10 s dy namic b inpu t capacitance c iss v ds = - 15 v, v gs = 0 v , f = 1 mhz 590 pf output capacitance c os s 11 5 reverse transfer capacitance c rs s 93 t otal gate charge q g v ds = - 15 v , v gs = - 1 0 v, i d = - 4.2 a 13.6 21 nc v ds = - 15 v , v gs = - 4.5 v, i d = - 4 .2 a 711 gate-source charge q gs 2.3 gate- drain charge q gd 3.2 g ate resistance r g f = 1 mhz 1 5 10 tu r n - o n d e l ay t i m e t d( on) v dd = - 15 v , r l = 4.5 i d ? - 3.3 a, v gen = - 4.5 v, r g = 1 30 45 ns rise time t r 25 38 turn-off delay time t d( off) 16 24 fall time t f 81 6 tu r n - o n d e l ay t i m e t d( on) v dd = - 15 v , r l = 4.5 i d ? - 3. 3 a, v ge n = - 10 v , r g = 1 81 6 rise time t r 10 20 turn-off delay time t d( off) 18 27 fall time t f 81 6 drain -source body diode characteristics continuous source-drain diode current i s t c = 25 c - 4. 2 a pulse diode forward current i sm - 2 5 body diode voltage v sd i s = - 3.3 a, v gs = 0 v - 0.8 - 1.2 v body diode reverse recovery time t rr i f = - 3.3 a, di/dt = 100 a/s, t j = 25 c 1 7 26 ns body diode reverse recovery charge q rr 91 8nc reverse recovery fall time t a 10 ns re verse recovery rise time t b 7 dt 6$ www.din-tek.jp
3 typica l characteristics 25 c, unless otherwise noted outpu t characteristics on-resistance vs. drain current gate charge 0 5 10 15 20 25 0.0 0.5 1.0 1.5 2.0 2.5 3.0 v gs =1 0 v thr u 6 v v gs =4 v v gs =3 v v gs =5 v v ds - drain-to-so u rce v oltage ( v ) - drain c u rrent (a) i d 0.00 0.02 0.04 0.06 0.0 8 0.10 0 5 10 15 20 25 v gs =1 0 v v gs =4 .5 v - on -resistance ( ) r ds( on) i d - drain c u rrent (a) 0 2 4 6 8 10 03 691215 v ds =2 4 v v ds = 8v i d = 4.2 a v ds =1 5 v - gate -to-so u rce v oltage ( v ) q g - total gate charge (nc) v gs trans fer characteristics capacitance on-resistance vs. junction temperature 0.0 0.6 1.2 1. 8 2.4 3.0 012 34 t c = 25 c t c = 125 c t c = - 55 c v gs - gate-to-so u rce v oltage ( v ) - drain c u rrent (a) i d 0 200 400 600 8 00 1000 0 5 10 15 20 c is s c rss c oss v ds - drain-to-so u rce v oltage ( v ) c - capacitance (pf) 0.7 0.9 1.1 1.3 1.5 1.7 - 50 - 25 0 25 50 75 100 125 150 i d =4 .2 a v gs =1 0 v v gs =4 .5 v t j -j u nction temperat u re (c) ( n ormalized) - on -resistance r ds(on) dt 6$ www.din-tek.jp
4 ty pical characteristics 25 c, unless otherwise noted sou rce-drain diode forward voltage threshold voltage 0.1 1 10 100 0.0 0.3 0.6 0.9 1.2 1.5 t j = 150 c t j = 25 c v sd -s o u rce-to-drain v oltage ( v ) - so u rce c u rrent (a) i s 1.2 1.4 1.6 1. 8 2.0 2.2 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a ( v ) v gs( th) t j - temperat u re (c) on-r esistance vs. gate-to-source voltage single pulse power (junction-to-ambient) 0.02 0.04 0.06 0.0 8 0.10 246 8 10 i d =4 .2a t j =2 5 c t j = 125 c - on -resistance ( ) r d s(on) v gs - gate-to-so u rce v oltage ( v ) 0 2 4 6 8 10 0.01 0.1 1 10 100 1000 time (s) po w er ( w ) t a = 25 c saf e operating area, junction-to-ambient 100 1 0.1 1 10 100 0.01 10 0.1 t a = 25 c single p u lse 100 ms limited b yr ds (on) * b v dss limited 1m s 100 s 10 ms 1s ,10s dc v ds - drain-to-so u rce v oltage ( v ) * v gs > minim u m v gs at w hich r ds (on) is specified - drain c u rrent (a) i d dt 6$ www.din-tek.jp
5 typica l characteristics 25 c, unless otherwise noted * the power dissipation p d is b ased on t j(max ) = 15 0 c, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to determine the current rating, when this rating falls below the package limit. current derating* 0 2 4 6 8 0 255075100125150 package limited t c - case temperat u re (c) i d - drain c u rrent (a) pow er, junction-to-foot 0.0 0.5 1.0 1.5 2.0 2.5 0 25 50 75 100 125 150 t c - case temperat u re (c) po w er ( w ) po wer, junction-to-ambient 0.0 0.2 0.4 0.6 0. 8 1.0 0 25 50 75 100 125 150 t a -a m b ient temperat u re (c) po w er ( w ) dt 6$ www.din-tek.jp
6 . norm alized thermal transient im pedance, junction-to-ambient 10 -3 10 -2 1 10 1000 10 -1 10 -4 100 0.2 0.1 sq u are w a v ep u lse d u ration (s) n ormalized effecti v e transient thermal impedance 1 0.1 0.01 t 1 t 2 n otes: p dm 1. d u ty cycle, d = 2. per unit base = r thja =1 66 c/ w 3. t jm -t a =p dm z thja (t) t 1 t 2 4. s u rface mo u nted d u t y cycle = 0.5 single p u lse 0.02 0.05 no rmalized thermal transient impedance, junction-to-foot 10 -3 10 -2 10 1 10 -1 10 -4 0.2 0.1 d u ty cycle = 0.5 sq u are w a v ep u lse d u ration (s) n ormalized effecti v e transient thermal impedance 1 0.1 0.01 0.05 single p u lse 0.02 th e rm a l ratings (t a = 25 c, un le ss ot he rwi se no ted) no t e ? t he ch ar ac te ris ti cs sh o wn in the two gr aphs - nor malized tra ns i ent th ermal impedance junction- to -ambient ( 25 c) - normalized transi ent thermal impedance junction- to -foot ( 25 c ) ar e gi ve n for general gui de l in es on ly to e nab le the us er to ge t a ba ll park indication of part capabil it ie s. the data are ex tra ct ed from sin gle pu lse tr a ns i ent th ermal im pedan ce charac ter is ti cs wh ich are de ve loped fr om empirical m ea s ur em ent s. the la tt er is va lid for the p art mounte d on printed cir cuit board - fr 4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. the part ca pa b i li t i e s c an widely vary depending on ac tu al a ppl ic at i on par am ete rs and operati ng c o n ditio n s. dt 6$ www.din-tek.jp
1 sot-23 (t o-236): 3-l ead b e e 1 1 3 2 s e e 1 d a 2 a a 1 c s e a ting pla ne 0.10 mm 0.004" c c l 1 l q g au ge pl a ne s e a ting pla ne 0.25 mm dim millimeters inches min max min max a 0.89 1.12 0.0 3 5 0.044 a 1 0.01 0.10 0.0004 0.004 a 2 0.88 1.02 0.0 3 46 0.040 b 0. 35 0.50 0.014 0.020 c 0.085 0.18 0.00 3 0.007 d 2.80 3.04 0.110 0.120 e 2.10 2.64 0.08 3 0.104 e 1 1.20 1.40 0.047 0.055 e 0.95 bsc 0.0 3 74 ref e 1 1.90 bsc 0.0748 ref l 0 .40 0.60 0.016 0.024 l 1 0.64 ref 0. 025 ref s 0.5 0 ref 0.020 ref q 3 8 38 ecn: s-0 3 946-rev. k, 09-jul-01 dwg: 5479 package information www.din-tek.jp
 1 application note recommende d minimum pads for sot-23 0.106 (2.692) recommended mi nimum pads dimensions in inches/(mm) 0.022 (0.559) 0.049 (1.245) 0.029 (0.724) 0.037 (0.950) 0.053 (1.341) 0.097 (2.459) return to index re tu rn to index application note www.din-tek.jp
1 disclaimer all pro duct, product specifications and data are subject to change without notice to improve reliability, function or design or otherwise. din-tek intertechnology, inc., its affiliates, agents, and employee s, and all persons acting on it s or their behalf (collectivel y, din-tek ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. din-tek makes no warranty, repres entation or guarantee regarding the suitabilit y of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicable law, din-tek disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation specia l, consequential or incidental damages, and (iii) any and all i mplied warranties, including warra nties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of products for certain type s of applications are based on din-tek s knowledge of typical requirements that are often placed on din-tek products in generic applications. such statements are not binding statements about the suitability of products for a particular application. it is the customers responsib ility to validate that a particu lar product with the properties descri bed in the product specification is suitable fo r use in a particular application. parameters provided in datasheets and/or specification s may vary in different applications an d performance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify din-tek s terms and condit ions of purchase, including but not limited to the warranty expressed therein. except as expressly indicate d in writing, din-tek products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the din-tek product could result in personal injury or death. customers using or selling din-tek products not expressly indicated for use in such applications do so at their own risk. pleas e contact authorized din-tek personnel to ob tain written terms and conditions regarding products designed for such applications. no license, express or implied, by estoppel or otherwise, to any intellectual prope rty rights is granted by this document or by any conduct of din-tek . product names and markings noted herein may be trad emarks of their respective owners. material category policy din-tek intertech nology, inc. hereby certi fies that all its products that are id entified as rohs-compliant fulfill the definitions and restrictions defined under directive 2011/65/eu of the euro pean parliament and of the council of june 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (eee) - recast, unless otherwis e specified as non-compliant. please note that some din-tek documentation may still make reference to rohs directive 2002/95/ ec. we confirm that all the products identified as being compliant to directive 2002 /95/ec conform to directive 2011/65/eu. din-tek intertechnology, inc. hereby certifi es that all its products that are identified as ha logen-free follow halogen-free requirements as per jedec js709a stan dards. please note that some din-tek documentation may still make reference to the iec 61249-2-21 definition. we co nfirm that all the products identified as being compliant to iec 61249-2-21 conform to jedec js709a standards. legal disclaimer notice www.din-tek.jp


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